MTP20N10E tmos power fet 20 amperes ros(on) = 0.15 ohm 100 volts to-220ab rating drain-source voltage drain-gate voltage (rgs ~ 1 m!" gate-source voltage ? continuous ? non-repetitive up < 50 jis) drain current ? continuous ? pulsed total power dissipation (n tc = 25c derate above 25"c operating and storage temperature range symbol vdss vdgr vgs vgsm id iom pd tj, tstg value 100 100 20 40 20 60 100 0.67 -6510 175 unit vdc vdc vdc vpk adc warts w/c c unclamped drain-to-source avalanche characteristics (tj 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (201) 376-2922 (212) 227-6005 fax: (201)376-8960 MTP20N10E electrical characteristics (tc = 25c unless otherwise noted) characteristic symbol max unit off characteristics drain-source breakdown voltage (vqs = 0, id = 0.25 ma) zero gate voltage drain current (vds = rated vdss. vgs = 0) *> tj = 100c static drain-source on-resistance (vqs = 10 vdc, id = 10 adc) drain-source on-voltage (vqs = 10 v) (id - 20 adc) (id = 10 adc, tj = 100*0 forward transconductance (vds = 15 v. id = '0 a| vgs(th) i-ds(on) vds(on) 9fs 2 1.5 - ' - 6 4.5 4 0.15 3.6 3 ? vdc ohm vdc mhos dynamic characteristics input capacitance output capacitance reverse transfer capacitance (vos - 25 v, vgs - o, f = 1 mhz) see figure 16 ciss coss crss ? ? - 1600 600 200 pf switching characteristics* (tj = 100'ci turn-on delay time rise time turn-off delay time fall time total gate charge gate-source charge gate-drain charge (vod = 25 v, id = 0.5 rated id see figure 9 (vds ~ -8 rat8d vdss. id - rated id, vgs = 10 v) see figures 17 and 18 'd(on) tr 'd(off) tf g ogs qgd ? ? - ? 28 (typ) 15 (typ) 13 (typ) so 450 100 200 50 ? - ns nc source drain diode characteristics* forward on-voltage forward turn-on time reverse recovery time (is - rated id vgs = o> vsd ton 'rr 1.4 (typ) 1.9 vdc limited by stray inductance 300 (typ) ? ns internal package inductance internal drain inductance (measured from the contact screw on tab to center of die) (measured from the drain lead 0.25* from package to center of die) internal source inductance (meaiurtd from the source lead 0.25" from package to source bond pad.) l-d ls 3.5 (tvp) 4.5 (typ) 7.5 (typ) - ? nh ?pulm tut: pulh width * 300 nt. duty cycl? * 2%. quality semi-conductors
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